Giant increase in piezoelectric coefficient of AlN by Mg-Nb simultaneous addition and multiple chemical states of Nb

被引：56

作者：

Uehara, Masato ^{[1
,2
]}

Shigemoto, Hokuto ^{[2
]}

Fujio, Yuki ^{[1
]}

Nagase, Toshimi ^{[1
]}

Aida, Yasuhiro ^{[3
]}

Umeda, Keiichi ^{[3
]}

Akiyama, Morito ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Mfg Res Inst, 807-1 Tosu, Saga 8410052, Japan

[2] Kyushu Univ, Dept Mol & Mat Sci, Interdisciplinary Grad Sch Engn Sci, 6-1 Kasuga Kouen, Kasuga, Fukuoka 8168580, Japan

[3] Murata Mfg Co Ltd, 1-10-1 Higashikoutari, Nagaokakyo, Kyoto 6178555, Japan

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 11期

关键词：

FILM RESONATOR TECHNOLOGY; NITRIDE THIN-FILMS; DEPOSITION;

D O I：

10.1063/1.4990533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum nitride (AlN) is one of piezoelectric materials, which are eagerly anticipated for use in microelectromechanical systems (MEMS) applications such as communication resonators, sensors, and energy harvesters. AlN is particularly excellent in generated voltage characteristics for the MEMS rather than oxide piezoelectric materials such as lead zirconium titanate Pb(Zr, Ti)O-3. However, it is necessary to improve the piezoelectric properties of AlN in order to advance the performance of the MEMS. We dramatically increased the piezoelectric coefficient d(33) of AlN films by simultaneously adding magnesium (Mg) and niobium (Nb). The d(33) of Mg39.3Nb25.0Al35.7N is 22 pC/N, which is about four times that of AlN. The d(33) is increased by Mg and Nb simultaneous addition, and is not increased by Mg or Nb single addition. Interestingly, the Nb has multiple chemical states, and which are influenced by the Mg concentration.

引用

页数：4

共 24 条

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