Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

被引:0
|
作者
Vandermolen, Eric [1 ,2 ]
Ferrandis, Philippe [3 ]
Allibert, Frederic [2 ]
Nabet, Massinissa [4 ]
Rack, Martin [4 ]
Raskin, Jean-Pierre [4 ]
Casse, Mikael [1 ]
机构
[1] Univ Grenoble Alpes, LETI, CEA, F-38000 Grenoble, France
[2] SOITEC, Parc Technol Fontaines, F-38190 Bernin, France
[3] Univ Toulon & Var, Univ Grenoble Alpes, Inst Neel, CNRS, F-38000 Grenoble, France
[4] Catholic Univ Louvain, ICTEAM, B-1348 Louvain La Neuve, Belgium
关键词
RF HARMONIC DISTORTION; SOI CMOS TECHNOLOGY; ELECTRICAL-PROPERTIES; EXTENDED DEFECTS; CPW LINES; SILICON; SPECTROSCOPY; COMPLEXES; SIGNAL; IRON;
D O I
10.1063/5.0045306
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, high-resistivity gold-implanted silicon substrates developed for radio frequency (RF) applications were characterized. By varying PICTS (Photo-Induced Current Transient Spectroscopy) measurement conditions such as the illumination wavelength, we identified the signature and the nature of four dominant traps. Two were electron traps and the others were hole traps. All of the related defects involved gold atoms. RF simulations of coplanar waveguide transmission lines integrated on these substrates were carried out, based on the trap properties extracted from PICTS results. A good agreement between RF experimental data and simulations was achieved by tuning the trap concentrations. Finally, the gold density extracted from the fit was successfully compared with the secondary ion mass spectrometry profile and an explanation of the role of the traps in RF behavior of the substrate was given.
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页数:8
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