Multi-Scale Analysis of Hydrogen-Induced Buckling in Pd Films

被引:6
作者
Cizek, J. [1 ]
Prochazka, I. [1 ]
Vlach, M. [1 ]
Zaludova, N. [1 ]
Dobron, P. [1 ]
Chmelik, F. [1 ]
Brauer, G. [2 ]
Anwand, W. [2 ]
Muecklich, A. [2 ]
Nikitin, E. [3 ]
Gemma, R. [3 ]
Pundt, A. [3 ]
Kirchheim, R. [3 ]
机构
[1] Charles Univ Prague, Fac Math & Phys, CZ-18000 Prague 8, Czech Republic
[2] Forschungszentrum Dresden Rossendorf, Inst Ionenstrahlphys & Materialforschung, D-01314 Dresden, Germany
[3] Univ Gottingen, Inst Materialphys, D-37073 Gottingen, Germany
来源
MESOMECHANICS 2009 | 2009年 / 1卷 / 01期
关键词
hydrogen; thin films; dislocations; positron annihilation; acoustic emission; SURFACES;
D O I
10.1016/j.proeng.2009.06.024
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
Hydrogen loading causes a significant volume expansion, which is isotropic in free-standing bulk materials. Contrary to bulk samples, thin films are clamped to an elastically stiff substrate, which prevents in-plane expansion. Hence, volume expansion of a thin film is strongly anisotropic because it expands only in the out-of-plane direction. High internal stresses introduced during hydrogen loading may lead to a situation when detachment of film from the substrate is energetically favorable. In the present work, we studied hydrogen-induced buckling of thin Pd films using a multi-scale approach. Defects in buckled films were characterized on the atomic level by positron annihilation spectroscopy combined with microstructure studies by transmission electron microscopy. Meso-scale measurements were performed by acoustics emission. Observations at the macroscopic level were performed by optical microscopy. It was found that buckling of thin films occurs at hydrogen concentrations x(H) > 0.1. Defect studies of buckled Pd films revealed a significant increase of dislocation density in agreement with acoustic emission studies which demonstrated a correlated movement of dislocations with a well-defined threshold coinciding with the onset of buckling. (C) 2009 Elsevier B. V. All rights reserved
引用
收藏
页码:99 / 103
页数:5
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