A continuous compact MOSFET model for fully- and partially-depleted SOI devices

被引：48

作者：

Sleight, JW ^{[1
]}

Rios, R

机构：

[1] Digital Equipment Corp, Semicond, Technol Dev Grp, Hudson, MA 01749 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

FD; PD; SOI;

D O I：

10.1109/16.662786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully continuous compact SOI MOSFET model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented, Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, our model accounts for the possible transitions between FD and PD behavior during the device operation.

引用

页码：821 / 825

页数：5

共 11 条

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