A continuous compact MOSFET model for fully- and partially-depleted SOI devices

被引：49

作者：

Sleight, JW ^{[1
]}

Rios, R

机构：

[1] Digital Equipment Corp, Semicond, Technol Dev Grp, Hudson, MA 01749 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

FD; PD; SOI;

D O I：

10.1109/16.662786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully continuous compact SOI MOSFET model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented, Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, our model accounts for the possible transitions between FD and PD behavior during the device operation.

引用

页码：821 / 825

页数：5

共 11 条

[1] PCIM - A PHYSICALLY-BASED CONTINUOUS SHORT-CHANNEL IGFET MODEL FOR CIRCUIT SIMULATION [J].

ARORA, ND ;

RIOS, R ;

HUANG, CL ;

RAOL, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :988-997

[2]

ARORA ND, 1994, P IEEE INT SOI C, P19

[3] MISNAN - A PHYSICALLY BASED CONTINUOUS MOSFET MODEL FOR CAD APPLICATIONS [J].

BOOTHROYD, AR ;

TARASEWICZ, SW ;

SLABY, C .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (12) :1512-1529

[4] PHYSICAL ORIGIN OF NEGATIVE DIFFERENTIAL RESISTANCE IN SOI TRANSISTORS [J].

MCDAID, LJ ;

HALL, S ;

MELLOR, PH ;

ECCLESTON, W ;

ALDERMAN, JC .

ELECTRONICS LETTERS, 1989, 25 (13) :827-828

[5] A CHARGE SHEET CAPACITANCE MODEL OF SHORT CHANNEL MOSFETS FOR SPICE [J].

PARK, HJ ;

KO, PK ;

HU, CM .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (03) :376-389

[6]

Rios R, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P937, DOI 10.1109/IEDM.1995.499370

[7] AN ANALYTIC POLYSILICON DEPLETION EFFECT MODEL FOR MOSFETS [J].

RIOS, R ;

ARORA, ND ;

HUANG, CL .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (04) :129-131

[8] A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior [J].

Sleight, JW ;

Rios, R .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :143-146

[9] SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING [J].

SU, LT ;

ANTONIADIS, DA ;

ARORA, ND ;

DOYLE, BS ;

KRAKAUER, DB .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :374-376

[10] A PHYSICAL CHARGE-BASED MODEL FOR NON-FULLY DEPLETED SOI MOSFETS AND ITS USE IN ASSESSING FLOATING-BODY EFFECTS IN SOI CMOS CIRCUITS [J].

SUH, D ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (04) :728-737

← 1 2 →