Optical and electrical studies of transparent conductive AZO and ITO sputtered thin films for CIGS photovoltaics

被引：24
作者：
Mereu, R. A. [1 ,3 ]
Marchionna, S. [2 ]
Le Donne, A. [1 ]
Ciontea, L. [3 ]
Binetti, S. [1 ]
Acciarri, M. [1 ]
机构：
[1] Univ Milano Bicocca, Dept Mat Sci, Via Cozzi 55, I-20125 Milan, Italy
[2] Voltasolar s r l, I-22078 Turate, Italy
[3] Tech Univ Cluj Napoca, Cluj Napoca 400114, Romania
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10 | 2014年 / 11卷 / 9-10期
关键词：
transparent conductive oxides; thin films; optical and electrical properties; DC pulsed magnetron sputtering; chalcogenide-based PV; ZNO; LAYER; DEPOSITION;
D O I：
10.1002/pssc.201300631
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Due to the many advantages of aluminum doped zinc oxide (AZO) as an alternative to indium tin oxide (ITO), the optical and electrical properties of AZO thin films deposited on large substrates by D. C. pulsed magnetron sputtering have been investigated in view of future industrial applications. In order to evaluate the effectiveness of AZO thin films as transparent conductive oxide (TCO), their properties have been compared with those of standard ITO grown with the same technique. The effect of the thickness on the optical properties revealed higher transmittance values for AZO (T>86 %) than for ITO T>83 %) films. The best resistivity values obtained for AZO were about 9.7x10(-4) Ocm versus 5.09x10(-4) Ocm measured for ITO films. Moreover, it was observed that the film resistivity is significantly influenced by the working pressure in the case of AZO films while the ITO resistivity appears almost unaffected. Finally, since both the optical and electrical properties are influenced by the film thickness, it was crucial to determine the proper AZO thickness in order to obtain the optimum of electrical and optical properties for the photovoltaic applications. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1464 / 1467
页数：4
相关论文
共 12 条
[1]  
Acciarri M., 2013, P EUPVSEC PAR FRANC
[2]   INFLUENCE OF DISCHARGE PARAMETERS ON THE LAYER PROPERTIES OF REACTIVE MAGNETRON-SPUTTERED ZNO-AL FILMS [J].
ELLMER, K ;
KUDELLA, F ;
MIENTUS, R ;
SCHIECK, R ;
FIECHTER, S .
THIN SOLID FILMS, 1994, 247 (01) :15-23
[3]   Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering [J].
Herrero, J ;
Guillén, C .
THIN SOLID FILMS, 2004, 451 :630-633
[4]   Comprehensive Characterization of DC Sputtered AZO Films for CIGS Photovoltaics [J].
Huang, Chia-Hua ;
Cheng, Hung-Lung ;
Chang, Wei-En ;
Wong, Ming-Show .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) :H510-H515
[5]   Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films [J].
Kar, J. P. ;
Kim, S. ;
Shin, B. ;
Park, K. I. ;
Ahn, K. J. ;
Lee, W. ;
Cho, J. H. ;
Myoung, J. M. .
SOLID-STATE ELECTRONICS, 2010, 54 (11) :1447-1450
[6]   RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se2-based solar cell applications [J].
Lee, JC ;
Kang, KH ;
Kim, SK ;
Yoon, KH ;
Park, IJ ;
Song, J .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 64 (02) :185-195
[7]   Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions [J].
Lu, J. G. ;
Ye, Z. Z. ;
Zeng, Y. J. ;
Zhu, L. P. ;
Wang, L. ;
Yuan, J. ;
Zhao, B. H. ;
Liang, Q. L. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)
[8]   Synthesis and characterization of undoped, Al and/or Ho doped ZnO thin Films [J].
Mereu, R. A. ;
Mesaros, A. ;
Vasilescu, M. ;
Popa, M. ;
Gabor, M. S. ;
Ciontea, L. ;
Petrisor, T. .
CERAMICS INTERNATIONAL, 2013, 39 (05) :5535-5543
[9]  
Park JH, 2006, J KOREAN PHYS SOC, V49, pS584
[10]   Effect of ZnO buffer layer on AZO film properties and photovoltaic applications [J].
Shi, J. H. ;
Huang, S. M. ;
Chu, J. B. ;
Zhu, H. B. ;
Wang, Z. A. ;
Li, X. D. ;
Zhang, D. W. ;
Sun, Z. ;
Cheng, W. J. ;
Huang, F. Q. ;
Yin, X. J. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (10) :1005-1013
12