Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method

被引:37
作者
Dongle, Vrushali S. [1 ]
Dongare, Akshata A. [1 ]
Mullani, Navaj B. [2 ]
Pawar, Pravin S. [3 ]
Patil, Prashant B. [4 ]
Heo, Jaeyeong [3 ]
Park, Tae Joo [2 ]
Dongale, Tukaram D. [1 ]
机构
[1] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India
[2] Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
[3] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Dept Mat Sci & Engn, Gwangju 61186, South Korea
[4] Shivaji Univ, New Coll, Dept Phys, Kolhapur 416012, Maharashtra, India
关键词
MEMRISTIVE DEVICES; SYSTEMS; RRAM; FREQUENCY;
D O I
10.1007/s10854-018-9997-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present report, a simple and cost-effective successive ionic layer adsorption and reaction method is employed to develop self-rectifying ZnO thin film memory device. The nature of pinched hysteresis loop and frequency dependent I-V characteristics depicts that the developed device behaves like a memristive device. Moreover, significant pinched hysteresis loop at 1MHz was observed which could be further exploited for the development of new class of high-frequency circuits by using ZnO memristive device. The observed analog memory with scan rate dependent synaptic weights behavior suggests that the ZnO memristive device is a potential candidate for the development of electronic synaptic devices for neuromorphic computing application. Furthermore, multilevel resistive switching with good memory window was obtained at 0.2V read voltage. The developed device switched successfully in consecutive 10k resistive switching cycles and can retain multilevel resistance states over 1000s without any observable degradation in the resistance states. The insights drawn from electrical characterization indicates that the device charge and charge-magnetic flux relations depend upon the frequency of the applied signal. Furthermore, we have presented the criteria for differentiating the experimental device as a memristor or memristive device based on the nature of time domain charge and double valued charge-magnetic flux relation. The resistive switching effect of the present device is manifested due to the unified effect of the Ohmic and Schottky conduction mechanisms.
引用
收藏
页码:18733 / 18741
页数:9
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