Novel vertical polysilicon thin-film transistor with excimer-laser annealing

被引：10

作者：

Lee, MZ ^{[1
]}

Lee, CL ^{[1
]}

Lei, TF ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

vertical; TFT; VTFT; ELA and self-alignment;

D O I：

10.1143/JJAP.42.2123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we propose a novel self-alignment vertical thin-film transistor (VTFT) structure with excimer laser annealing (ELA). The ELA on source and drain decreases the process temperature, suppresses the lateral diffusion of dopants in short channel devices and increases the driving current. Furthermore, the VTFTs have high carrier mobility, compared to conventional polysilicon thin film transistors (TFTs).

引用

收藏

页码：2123 / 2126

页数：4

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