Flexible HfxZr1-xO2 Thin Films on Polyimide for Energy Storage With High Flexibility

被引：11

作者：

Chen, Yuting ^{[1
,2
]}

Yang, Yang ^{[1
,2
]}

Yuan, Peng ^{[1
,2
]}

Jiang, Pengfei ^{[1
,2
]}

Xu, Yannan ^{[1
,2
]}

Lv, Shuxian ^{[1
,2
]}

Ding, Yaxin ^{[1
,2
]}

Dang, Zhiwei ^{[1
,2
]}

Gong, Tiancheng ^{[1
,2
]}

Wang, Yan ^{[1
,2
]}

Luo, Qing ^{[1
,3
,4
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 101408, Peoples R China

[3] Peng Cheng Lab, Dept Math & Theories, Shenzhen, Peoples R China

[4] Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 200433, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Flexible; antiferroelectric; HfO2-based; energy-storage capacitor; PERFORMANCE;

D O I：

10.1109/LED.2022.3171273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flexible energy-storage capacitor has attracted great interest on account of the rapid development of the combination of intelligent systems and flexible electronics. In this work, we fabricated flexible energy-storage capacitors by depositing HfxZr1-xO2 thin films on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible capacitors exhibit high energy storage density (ESD approximate to 35.4 J/cm(3)) and efficiency (eta approximate to 69.3%). Furthermore, ESD and eta remained stable even bending 5000 cycles with a radius of 2 mm. This work provide reference for the development of high-performance flexible HfO2-based energy storage devices.

引用

页码：930 / 933

页数：4

共 27 条

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