A high density, low on-resistance P-channel trench lateral power MOSFET for high side switches

被引：2
|
作者：
Sawada, M [1 ]
Sugi, A [1 ]
Iwaya, M [1 ]
Kajiwara, S [1 ]
Matsunaga, S [1 ]
Mochizuki, K [1 ]
Fujishima, N [1 ]
机构：
[1] Fuji Elect Adv Technol Co Ltd, Device Technol Lab, Matsumoto, Nagano, Japan
来源：
PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/PESC.2004.1354732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Trench Lateral Power MOSFET (TLPM) has a unique structure. The gate is formed on the trench sidewall, and the drain is connected with metal wire at the bottom of the trench. This structure enables high device density compared to conventional lateral DMOSs. A p-channel TLPM for high side switches has been first integrated. A specific on-resistance of 28 mOmega - mm(2) with a breakdown voltage of 35V has been realized. This is the best specific on-resistance in this voltage class for a p-channel lateral power MOSFET embedded with logic devices. P-channel, n-channel TLPM devices and a 0.6mum Bi-CMOS are fabricated on the same silicon wafer, thus a synchronous switching converter can be implemented on a single chip.
引用
收藏
页码：4143 / 4148
页数：6
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