Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

被引：21

作者：

Ramachandran, V ^{[1
]}

Feenstra, RM

Sarney, WL

Salamanca-Riba, L

Greve, DW

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

[3] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.582445

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected both by the narrow x-ray peak widths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower x-ray peak widths for both symmetric and asymmetric reflections. We also note a marked improvement in surface morphology, from a columnar appearance to a two-dimensional surface, under extremely Ca-rich growth conditions. (C) 2000 American Vacuum Society. [S0734-2101(00)04904-6].

引用

页码：1915 / 1918

页数：4

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