Composition profiling of InAs/GaAs quantum dots

被引：84

作者：

Lemaître, A ^{[1
]}

Patriarche, G ^{[1
]}

Glas, F ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

关键词：

D O I：

10.1063/1.1811796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a simple and straightforward technique to measure the composition distribution of In(Ga)As/GaAs quantum dots (QDs). This method is based on the quantitative analysis of 002 dark field image contrast in cross-sectional transmission electron microscopy. InAs/GaAs QDs show strong InGaAs alloying resulting in the formation, prior to capping, of an inverted indium composition gradient, with higher In concentration at the top. Such a mechanism implies a large Ga mass transport from the substrate. The capping process is also investigated. It strongly affects the QD shape by dissolving the apex via surface migration of indium atoms away from the dot. (C) 2004 American Institute of Physics.

引用

页码：3717 / 3719

页数：3

共 11 条

[1] Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy [J].

Bruls, DM ;

Vugs, JWAM ;

Koenraad, PM ;

Salemink, HWM ;

Wolter, JH ;

Hopkinson, M ;

Skolnick, MS ;

Long, F ;

Gill, SPA .

APPLIED PHYSICS LETTERS, 2002, 81 (09) :1708-1710

[2] Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Mowbray, DJ ;

Skolnick, MS ;

Finley, JJ ;

Barker, JA ;

O'Reilly, EP ;

Wilson, LR ;

Larkin, IA ;

Maksym, PA ;

Hopkinson, M ;

Al-Khafaji, M ;

David, JPR ;

Cullis, AG ;

Hill, G ;

Clark, JC .

PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736

[3] The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys [J].

Glas, F .

PHILOSOPHICAL MAGAZINE, 2004, 84 (20) :2055-2074

[4] Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying [J].

Joyce, PB ;

Krzyzewski, TJ ;

Bell, GR ;

Joyce, BA ;

Jones, TS .

PHYSICAL REVIEW B, 1998, 58 (24) :15981-15984

[5] Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots [J].

Kegel, I ;

Metzger, TH ;

Lorke, A ;

Peisl, J ;

Stangl, J ;

Bauer, G ;

García, JM ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 2000, 85 (08) :1694-1697

[6] Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots [J].

Liu, N ;

Tersoff, J ;

Baklenov, O ;

Holmes, AL ;

Shih, CK .

PHYSICAL REVIEW LETTERS, 2000, 84 (02) :334-337

[7] Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate [J].

Patriarche, G ;

Largeau, L ;

Harmand, JC ;

Gollub, D .

APPLIED PHYSICS LETTERS, 2004, 84 (02) :203-205

[8] Quantification of segregation and mass transport in InxGa1-xAs/GaAs Stranski-Krastanow layers -: art. no. 245334 [J].

Rosenauer, A ;

Gerthsen, D ;

Van Dyck, D ;

Arzberger, M ;

Böhm, G ;

Abstreiter, G .

PHYSICAL REVIEW B, 2001, 64 (24)

[9] Composition evaluation of InxGa1-xAs Stranski-Krastanow-island structures by strain state analysis [J].

Rosenauer, A ;

Fischer, U ;

Gerthsen, D ;

Forster, A .

APPLIED PHYSICS LETTERS, 1997, 71 (26) :3868-3870

[10] EMS - A SOFTWARE PACKAGE FOR ELECTRON-DIFFRACTION ANALYSIS AND HREM IMAGE SIMULATION IN MATERIALS SCIENCE [J].

STADELMANN, PA .

ULTRAMICROSCOPY, 1987, 21 (02) :131-145

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