Quantum levels in Ge quantum dots studied by photocurrent spectroscopy and admittance spectroscopy

被引：8
作者：
Zhou, H [1 ]
Huang, SH [1 ]
Rao, Y [1 ]
Jiang, ZM [1 ]
Lu, F [1 ]
机构：
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
quantum dots; quantum levels; photocurrent; admittance spectroscopy;
D O I：
10.1016/S0038-1098(02)00765-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The quantum levels of self-assembled Ge quantum dots are studied by photocurrent spectra and admittance spectra. The photocurrent peaks appearing around 0.8 eV are ascribed to the indirect transition of the carriers from the quantum level in Ge dots to the conduction band of Si. The activation energies derived from the admittance spectra under different bias voltages are in the range of 0.257-0.356 eV, which indicates that the ground hole state in Ge dots of 40 nm in diameter is about 0.36 eV, and the Coulomb charging energy in this kind dots is about 10 meV. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：161 / 164
页数：4
相关论文
共 11 条
  • [1] N-ELECTRON GROUND-STATE ENERGIES OF A QUANTUM-DOT IN MAGNETIC-FIELD
    ASHOORI, RC
    STORMER, HL
    WEINER, JS
    PFEIFFER, LN
    BALDWIN, KW
    WEST, KW
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (04) : 613 - 616
  • [2] Hopping conduction and field effect in Si modulation-doped structures with embedded Ge quantum dots
    Biskupski, G
    Adkins, CJ
    Boucher, R
    Dvurechenskii, AV
    Nikiforov, AI
    Pchelyakov, OP
    Biskupski, G
    [J]. PHYSICAL REVIEW B, 1999, 59 (19): : 12598 - 12603
  • [3] Intraband absorption in Ge/Si self-assembled quantum dots
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Débarre, D
    Bouchier, D
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (03) : 401 - 403
  • [4] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS
    DREXLER, H
    LEONARD, D
    HANSEN, W
    KOTTHAUS, JP
    PETROFF, PM
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (16) : 2252 - 2255
  • [5] Type-II Ge/Si quantum dots
    Dvurechenskii, AV
    Yakimov, AI
    [J]. SEMICONDUCTORS, 2001, 35 (09) : 1095 - 1105
  • [6] Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe
    Lu, F
    Wang, SQ
    Jung, H
    Zhu, ZQ
    Yao, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) : 2425 - 2428
  • [7] Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si
    Miesner, C
    Röthig, O
    Brunner, K
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (08) : 1027 - 1029
  • [8] ADMITTANCE SPECTROSCOPY MEASUREMENTS OF BAND OFFSETS IN SI/SI1-XGEX/SI HETEROSTRUCTURES
    NAUKA, K
    KAMINS, TI
    TURNER, JE
    KING, CA
    HOYT, JL
    GIBBONS, JF
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (02) : 195 - 197
  • [9] Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate
    Tong, S
    Liu, JL
    Wan, J
    Wang, KL
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1189 - 1191
  • [10] Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
    Yakimov, AI
    Dvurechenskii, AV
    Proskuryakov, YY
    Nikiforov, AI
    Pchelyakov, OP
    Teys, SA
    Gutakovskii, AK
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1413 - 1415
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