Fabrication of p-well resonant tunneling diode based on SiGe/Si and its DC-parameter extraction

被引：7

作者：

Xiong, CR ^{[1
]}

Wang, Y ^{[1
]}

Chen, PY ^{[1
]}

Yu, ZP ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2004年 / 7卷 / 4-6期

关键词：

SiGe; resonant tunneling diodes; negative differential resistance;

D O I：

10.1016/j.mssp.2004.09.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant tunneling diodes (RTD) are considered as one of the most promising band-gap engineering heterostructure devices for negative differential resistance (NDR) feature in the current-voltage trace. In this letter, a p-well SiGe/Si RTD is proposed and demonstrated. Its I-V relationship is obtained by Keithley 4200 semiconductor parameter analyzer, and NDR feature can be observed obviously at room temperature. The obtained peak current density is 45.92 kA/cm(2), and peak to valley current ratio (PVCR) is 2.21. Considering the influence of series resistance on the I V relationship, the DC-parameter of RTD was extracted front the experimental data. This work is helpful to improve the performance of RTD and design of RTD-based circuits. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：379 / 382

页数：4

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