Characteristics of the low energy photoluminescence in μc-Si films

被引：15

作者：

Yue, GZ ^{[1
]}

Han, DX

McNeil, LE

Wang, Q

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 08期

关键词：

D O I：

10.1063/1.1289785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature and excitation-intensity dependence of the similar to 0.9 eV photoluminescence (PL) band has been studied in several microcrystalline silicon (mu c-Si) films with varied crystallinity. When the measurement temperature is increased from 15 to 180 K, the PL peak energy redshifts from 1.0 to 0.83 eV. The PL quenching of the intensity follows a model of carrier thermalization in an exponential band tail with a width of similar to 20 meV. The total PL intensity (I-PL) as a function of excitation intensity (I-ex) obeys a power law of I(PL)proportional to I-ex(gamma), where gamma approximate to 0.65 or 1 for high or low excitation intensity, respectively. The experimental results suggest that the similar to 0.9 eV PL band originates from radiative tail-to-tail transitions in the grain-boundary region in mu c-Si. (C) 2000 American Institute of Physics. [S0021-8979(00)06919-X].

引用

页码：4904 / 4906

页数：3

共 15 条

[11] RECOMBINATION IN ALPHA-SI-H - AUGER EFFECTS AND NON-GEMINATE RECOMBINATION [J].

STREET, RA .

PHYSICAL REVIEW B, 1981, 23 (02) :861-868

[12] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA .

ADVANCES IN PHYSICS, 1981, 30 (05) :593-676

[13] EFFECT OF GRAIN-BOUNDARIES ON THE RAMAN-SPECTRA, OPTICAL-ABSORPTION, AND ELASTIC LIGHT-SCATTERING IN NANOMETER-SIZED CRYSTALLINE SILICON [J].

VEPREK, S ;

SAROTT, FA ;

IQBAL, Z .

PHYSICAL REVIEW B, 1987, 36 (06) :3344-3350

[14] EXPONENTIAL BAND TAILS IN POLYCRYSTALLINE SEMICONDUCTOR-FILMS [J].

WERNER, J ;

PEISL, M .

PHYSICAL REVIEW B, 1985, 31 (10) :6881-6883

[15] Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon [J].

Yue, GZ ;

Lorentzen, JD ;

Lin, J ;

Han, DX ;

Wang, Q .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :492-494

← 1 2 →