Analysis and Design of Two Low-Power Ultra-Wideband CMOS Low-Noise Amplifiers With Out-Band Rejection

被引:29
作者
Liang, Ching-Piao [1 ]
Rao, Pei-Zong [1 ]
Huang, Tian-Jian [1 ]
Chung, Shyh-Jong [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu 30050, Taiwan
关键词
Complementary metal-oxide semiconductor (CMOS); low-noise amplifier (LNA); out-band rejection; ultra-wideband (UWB); INTEGRATED NOTCH FILTER; FRONT-END; LNA; INTERFERENCE; RECEIVER;
D O I
10.1109/TMTT.2009.2037855
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two 3-5-GHz low-power ultra-wideband (UWB) low-noise amplifiers (LNAs) with out-band rejection function using 0.18-mu m CMOS technology are presented. Due to the Federal Communications Commission's stringent power-emission limitation at the transmitter, the received signal power in the UWB system is smaller than those of the close narrowband interferers such as the IEEE 802.11 a/b/g wireless local area network, and the 1.8-GHz digital cellular service/global system for mobile communications. Therefore, we proposed a wideband input network with out-band rejection capability to suppress the out-band properties for our first UWB LNA. Moreover, a feedback structure and dual-band notch filter with low-power active inductors will further attenuate the out-band interferers without deteriorating the input matching bandwidth in the second UWB LNA. The 55/48/45 dB maximum rejections at 1.8/2.4/5.2 GHz, a power gain of 15 dB, and 3.5-dB minimum noise figure can be measured while consuming a dc power of only 5 mW.
引用
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页码:277 / 286
页数:10
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