A low temperature scanning tunneling microscopy system for measuring Si at 4.2 K

被引：15

作者：

Dreyer, Michael ^{[1
,2
]}

Lee, Jonghee ^{[1
,2
]}

Wang, Hui ^{[1
,2
]}

Barker, Barry ^{[2
]}

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20740 USA

[2] Lab Phys Sci, College Pk, MD 20740 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2010年 / 81卷 / 05期

关键词：

elemental semiconductors; scanning tunnelling microscopy; silicon; specimen preparation; HIGH-ENERGY RESOLUTION; SPECTROSCOPY; SURFACE;

D O I：

10.1063/1.3427217

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper we describe our low temperature scanning tunneling microscopy system with ultrahigh vacuum sample preparation capabilities. The main focus lies on the specialized silicon preparation facility which is the most unusual part. Other special solutions such as sample transport will also be described in detail. Finally, we demonstrate the ability to prepare high quality silicon (111) and (100) surfaces. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3427217]

引用

页数：6

共 25 条

[1] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].

BINNING, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61

[2] Cryogenic scanning tunneling microscope for quantum dot spectroscopy [J].

Chang, TH ;

Yang, CH ;

Yang, MJ ;

Dottellis, JB .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (07) :2989-2995

[3] A compact and versatile scanning tunnelling microscope with high energy resolution for use in a 3He cryostat [J].

Debuschewitz, C. ;

Muenstermann, F. ;

Kunej, V. ;

Scheer, E. .

JOURNAL OF LOW TEMPERATURE PHYSICS, 2007, 147 (3-4) :525-535

[4] A LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPE FOR USE IN HIGH MAGNETIC-FIELDS [J].

DUBOIS, JGA ;

GERRITSEN, JW ;

HERMSEN, JGH ;

VANKEMPEN, H .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (08) :4146-4149

[5]

Feenstra RM, 2007, NANOTECHNOLOGY, V18, DOI [10.1088/0957-4484/18/4/044015, 10.1088/0957-4484/18/43/435602]

[6] Design, operation, and housing of an ultrastable, low temperature, ultrahigh vacuum scanning tunneling microscope [J].

Ferris, JH ;

Kushmerick, JG ;

Johnson, JA ;

Youngquist, MGY ;

Kessinger, RB ;

Kingsbury, HF ;

Weiss, PS .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (07) :2691-2695

[7] Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope for single molecule studies on silicon surfaces [J].

Foley, ET ;

Yoder, NL ;

Guisinger, NP ;

Hersam, MC .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (12) :5280-5287

[8] How to fabricate a defect free Si(001) surface [J].

Hata, K ;

Kimura, T ;

Ozawa, S ;

Shigekawa, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04) :1933-1936

[9] Band-bending effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations [J].

Hirayama, Motoi ;

Nakamura, Jun ;

Natori, Akiko .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)

[10] Construction of a versatile ultralow temperature scanning tunneling microscope [J].

Kambara, H. ;

Matsui, T. ;

Niimi, Y. ;

Fukuyama, Hiroshi .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (07)

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