Raman scattering from LO-phonon-plasmon coupled modes in Ag-coated GaN nanocrystals

被引：13

作者：

Bessolov, VN

Konenkova, EV

Zhilyaev, YV

Sierra, BAP

Zahn, DRT

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] TU Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

来源：

APPLIED SURFACE SCIENCE | 2004年 / 235卷 / 03期

关键词：

Raman scattering; GaN nanocrystal; phonon-plasmon mode;

D O I：

10.1016/j.apsusc.2004.05.100

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Relationships are studied governing the Raman scattering spectra in GaN nanocrystals grown by HVPE on substrates of oxidized silicon with Ag atoms deposited in a UHV system. It is found that the intensity of an LO-phonon-plasmon coupled mode in GaN nanocrystals is increasing initially as metal atoms are deposited on their surface to a thickness of 3 nm and then decreasing. It is suggested that the intensity increase of this mode is due to increasing near-surface barrier height and the space-charge layer width. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：274 / 278

页数：5

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