Native and electron irradiation induced defects in 6H-SiC

被引：1

作者：

Friessnegg, T ^{[1
]}

Dannefaer, S ^{[1
]}

机构：

[1] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

SiC; vacancies; electron irradiation; positron annihilation;

D O I：

10.4028/www.scientific.net/MSF.258-263.721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Differences in the concentration of native defects were found in variously doped samples. The concentration of these grown in clusters is at least in the range of 10(16) cm(-3). An order of magnitude larger concentration of grown in defects is found in the heavily n-type material. Monovacancies are observed after electron irradiation at 100 K in bulk n-type 6H-SiC. These vacancies are in the neutral charge state and do not represent shallow positron traps. At about 375 K a large fraction of these vacancies anneal by Frenkel pair recombination.

引用

页码：721 / 726

页数：6

共 14 条

[1] Evaluation of some basic positron-related characteristics of SiC [J].

Brauer, G ;

Anwand, W ;

Nicht, EM ;

Kuriplach, J ;

Sob, M ;

Wagner, N ;

Coleman, PG ;

Puska, MJ ;

Korhonen, T .

PHYSICAL REVIEW B, 1996, 54 (04) :2512-2517

[2] CARBON AND SILICON VACANCIES IN ELECTRON-IRRADIATED 6H-SIC [J].

DANNEFAER, S ;

CRAIGEN, D ;

KERR, D .

PHYSICAL REVIEW B, 1995, 51 (03) :1928-1930

[3] A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORS [J].

DANNEFAER, S .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03) :599-605

[4] A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON [J].

DANNEFAER, S ;

FRUENSGAARD, N ;

KUPCA, S ;

HOGG, B ;

KERR, D .

CANADIAN JOURNAL OF PHYSICS, 1983, 61 (03) :451-459

[5]

Friessnegg T, 1997, MATER RES SOC SYMP P, V442, P625

[6] PHOTOLUMINESCENCE OF RADIATION-INDUCED DEFECTS IN 3C-SIC EPITAXIALLY GROWN ON SI [J].

ITOH, H ;

YOSHIKAWA, M ;

NASHIYAMA, I ;

OKUMURA, H ;

MISAWA, S ;

YOSHIDA, S .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :837-842

[7]

ITOH H, 1992, MATER RES SOC SYMP P, V262, P331, DOI 10.1557/PROC-262-331

[8]

ITOH H, 1992, J ELECT MAT, V21, P1707

[9] Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6H-SiC studied by positron lifetime spectroscopy [J].

Kawasuso, A ;

Itoh, H ;

Okada, S ;

Okumura, H .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :5639-5645

[10] POSITRON TRAPPING RATES AND THEIR TEMPERATURE DEPENDENCIES IN ELECTRON-IRRADIATED SILICON [J].

MASCHER, P ;

DANNEFAER, S ;

KERR, D .

PHYSICAL REVIEW B, 1989, 40 (17) :11764-11771

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