Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) -: art. no. 216102

被引：110

作者：

Montalenti, F

Raiteri, P

Migas, DB

von Känel, H

Rastelli, A

Manzano, C

Costantini, G

Denker, U

Schmidt, OG

Kern, K

Miglio, L

机构：

[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[2] Univ Milano Bicocca, LNESS, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Politecn Milan, INFM, I-22100 Como, Italy

[4] Politecn Milan, LNESS, Dipartimento Fis, I-22100 Como, Italy

[5] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.93.216102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By high resolution scanning tunneling microscopy, we investigate the morphological transition from pyramid to dome islands during the growth of Ge on Si(001). We show that pyramids grow from top to bottom and that, from a critical size on, incomplete facets are formed. We demonstrate that the bunching of the steps delimiting these facets evolves into the steeper dome facets. Based on first principles and Tersoff-potential calculations, we develop a microscopic model for the onset of the morphological transition, able to reproduce closely the experimentally observed behavior.

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页数：4

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