Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices

被引：20

作者：

Rathi, Servin ^{[1
,2
]}

Lee, In-yeal ^{[1
,2
]}

Park, Jin-Hyung ^{[1
,2
]}

Kim, Bong-Jun ^{[3
]}

Kim, Hyun-Tak ^{[3
,4
]}

Kim, Gil-Ho ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[3] ETRI, Met Insulator Transit Creat Res Ctr, Taejon 305700, South Korea

[4] Korean Univ Sci & Technol, Sch Adv Device Technol, Taejon 305700, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 22期

基金：

新加坡国家研究基金会;

关键词：

vanadium dioxide thin-films; annealing; metal-insulator transition; transmission line method; XPS; DRIVEN;

D O I：

10.1021/am5046982

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 degrees C. The V 2p(3/2) peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

引用

页码：19718 / 19725

页数：8

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