Hybrid Voltage Balancing Approach for Series-Connected 10 kV SiC MOSFETs for DC-AC Medium-Voltage Power Conversion Applications

被引:0
作者
Lin, Xiang [1 ]
Ravi, Lakshmi [1 ]
Dong, Dong [1 ]
Burgos, Rolando [1 ]
机构
[1] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst CPES, Blacksburg, VA 24061 USA
来源
2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2020年
关键词
10 kV SiC MOSFET; voltage sharing; parasitic capacitor; voltage balancing;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper focuses on voltage balancing control of series-connected 10 kV SiC MOSFETs for medium-voltage dc-ac power conversion applications. Under ac load current conditions, gate delay time control is used as an example to analyze the limitation of active voltage balancing control methods: 1) active voltage balancing control has a limitation to adjust delay time accurately under a wide-range of load current; 2) the voltage unbalance of body diodes cannot be solved by active voltage balancing control for MOSFETs. For two series-connected 10 kV SiC MOSFETs realized by one half bridge module, the analysis indicates that the unbalance parasitic capacitors inside the power module is the dominant factor causing the voltage unbalance. To achieve voltage balancing control of series-connected SiC MOSFETs and body-diodes, a hybrid approach is proposed in this paper: 1) one small compensation capacitor is applied to balance the non-uniform distribution of package parasitic capacitors inside the power module; 2) close-loop gate signal turn-off time adjustment is applied to compensate the gate signal error. To verify the proposed balancing approach, a single phase pump-back test is conducted to show the improvement of voltage sharing of both MOSFETs and body-diodes.
引用
收藏
页码:3769 / 3775
页数:7
相关论文
共 19 条
  • [1] DiMarino C, 2014, 2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), P54, DOI 10.1109/WiPDA.2014.6964623
  • [2] Jakka VN, 2019, IEEE ENER CONV, P5798, DOI [10.1109/ECCE.2019.8911830, 10.1109/ecce.2019.8911830]
  • [3] Ji SQ, 2019, IEEE ENER CONV, P1953, DOI [10.1109/ecce.2019.8912882, 10.1109/ECCE.2019.8912882]
  • [4] Lin X, 2020, APPL POWER ELECT CO, P1611, DOI [10.1109/apec39645.2020.9124263, 10.1109/APEC39645.2020.9124263]
  • [5] Lin Xiang, 2020, IEEE APPL POW EL C E
  • [6] Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters
    Madhusoodhanan, Sachin
    Tripathi, Awneesh
    Patel, Dhaval
    Mainali, Krishna
    Kadavelugu, Arun
    Hazra, Samir
    Bhattacharya, Subhashish
    Hatua, Kamalesh
    [J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2015, 51 (04) : 3343 - 3360
  • [7] Active Gate-Driver With dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs
    Marzoughi, Alinaghi
    Burgos, Rolando
    Boroyevich, Dushan
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2019, 66 (04) : 2488 - 2498
  • [8] 7-kV 1-MVA SiC-Based Modular Multilevel Converter Prototype for Medium-Voltage Electric Machine Drives
    Pan, Jianyu
    Ke, Ziwei
    Al Sabbagh, Muneer
    Li, He
    Potty, Karun Arjun
    Perdikakis, Will
    Na, Risha
    Zhang, Julia
    Wang, Jin
    Xu, Longya
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (10) : 10137 - 10149
  • [9] Parashar S, 2019, APPL POWER ELECT CO, P2773, DOI 10.1109/APEC.2019.8722176
  • [10] Pawaskar VU, 2019, IEEE ENER CONV, P3303, DOI [10.1109/ECCE.2019.8913123, 10.1109/ecce.2019.8913123]