A study of luminescence from Tm3+, Tb3+, and Eu3+ in AIN powder

被引:16
作者
Han, B.
Mishra, K. C. [1 ]
Raukas, M.
Klinedinst, K.
Tao, J.
Talbot, J. B.
机构
[1] OSRAM SYLVANIA, Cent Res, Beverly, MA 01915 USA
[2] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA
关键词
D O I
10.1149/1.2749098
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nitride alloys of Ga, In, and Al activated by rare-earth ions ( Re3+ ) are being considered for application in nitride-based solid-state light sources. The potential applications involve using such materials as the active layer in a heterostructure design or as a fluorescent material for converting the emission from a light-emitting diode to white light. In this paper, we report luminescence from Tm3+, Tb3+, Eu3+, and Tb3+ - Eu3+ couple in AlN powder samples synthesized for this purpose. Using the photoluminescence and photoluminescence excitation responses of Re3+-doped AlN samples, the multiplet structures of these Re3+ ions in AlN with tetrahedral coordination have been determined. The excitation energy transfer processes from the host and defects to Re3+ and from Tb3+ to Eu3+ have been observed. These processes are critical for developing nitride-based luminescent materials for white-light emission. (c) 2007 The Electrochemical Society.
引用
收藏
页码:J262 / J266
页数:5
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