Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study

被引：11

作者：

Matthai, CC ^{[1
]}

Moran, GA ^{[1
]}

机构：

[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

D O I：

10.1016/S0169-4332(97)00442-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have performed molecular dynamics simulations of the adsorption and diffusion of Ga, in and As adatoms an the (2 X 1) and (2 x 4) reconstructions of the GaAs(001) surfaces as well as on the unreconstructed (111)A and (111)B surfaces. For both (111) surfaces, the diffusion was found to be isotropic, whereas for the (001) surfaces the diffusion was primarily along the dimer rows. The As atoms were found to be the most mobile, on all the surfaces considered. The effects of strain on the activation energies was also investigated. (C) 1998 Elsevier Science B.V.

引用

页码：653 / 657

页数：5

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[8] Diffusion of Ga adatoms at the surface of GaAs(001) c(4 x 4)α and β reconstructions [J].

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