Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN/GaN high-electron-mobility transistors on silicon

被引：41
作者：
Arulkumaran, S.
Ng, G. I.
Liu, Z. H.
机构：
[1] Nanyang Technol Univ, Temasek Labs, MMIC Design Ctr, Singapore 637553, Singapore
[2] Nanyang Technol Univ, Sch EEE, Microelect Grp, Singapore 639798, Singapore
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 17期
关键词：
D O I：
10.1063/1.2730748
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of gate-source (GS) and gate-drain (GD) region passivation on the drain current (I-D) collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) were studied. Electrical stresses were applied to the GS and GD regions of HEMTs, (1) unpassivated (device A), (2) fully passivated (device B), (3) GD passivated only (device C), and (4) device C with additional full passivation (device D). An increase of I-D density and the extrinsic transconductance was observed in devices with full Si3N4 passivation. Due to the increase of gate leakage current by Si3N4 passivation, breakdown voltage decreases. Device A exhibited severe (96%) I-D collapse when it was electrically stressed in both the GS and GD regions. Devices C and D have suppressed only 14% of I-D collapse after passivation. However, HEMTs with full Si3N4 passivation (device B) have suppressed more than 80% of the I-D collapse. Full passivation is required to suppress the I-D collapse effectively for AlGaN/GaN HEMTs. The remaining I-D collapse (19%) of device B is affected primarily by bulk/buffer related traps rather than surface related traps. (c) 2007 American Institute of Physics.
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页数：3
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