Fabrication of p-type ZnO nanowires based heterojunction diode

被引：53

作者：

Das, Sachindra Nath ^{[1
]}

Choi, Ji-Hyuk ^{[1
]}

Kar, Jyoti Prakash ^{[1
]}

Lee, Tae Il ^{[1
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 121卷 / 03期

关键词：

Electronic materials; Nanostructures; Microstructure; Electrical properties; SOLAR-CELLS; THIN-FILMS; LI; NANOPARTICLES; TEMPERATURE; LITHIUM; ARRAYS; METAL;

D O I：

10.1016/j.matchemphys.2010.02.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm(-1) in Raman spectra was attributed to E-2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm(-1) for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：472 / 476

页数：5

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