Scanning tunneling microscopy investigation of Si-based layer structures

The paper reviews original results of the STM investigations of Si-SiO2 and Si-SiO2-polymer structures on the air Base principles of the structures surface modifications during the STM measurements were established. The modifications were shown to be reversible, and depend on the applied voltage polarity. Thus both depression- and protrusion-shape objects on the surface can be induced. A model of the STM-contrast formation on the surface of Si-SiO2 and Si-SiO2-polymer structures involving charge redistribution was suggested. The model establishes a relationship between the parameters of the energy barriers and the mechanisms of the charge transfer and accumulation in the layer structures. It explains the reversibility of the modifications and implies. the possibility of writing, reading, erasing and rewriting of information. The possibility was realized experimentally. Comparative study of macroscopic current-voltage characteristics and those measured by the STM was performed. It was shown that they are identical which allows to employ the STM data to evaluate the the energy parameters of the structures.