Nonexistence of the diatomic beta-tin structure

被引：70

作者：

Nelmes, RJ

McMahon, MI

Belmonte, SA

机构：

[1] Department of Physics and Astronomy, The University of Edinburgh, Edinburgh

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.79.3668

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Many high-pressure phases of the III-V and II-VI semiconductors have been believed to have the diatomic equivalent of the (tetragonal) beta-tin structure. Recent work has shown this to be incorrect in several cases. It is now shown that the same is true of all the remaining possibilities-AlSb, HgSe, InP, and GaP. The phases concerned all have orthorhombic structures of the Cmcm type. The apparent nonexistence of the beta-tin structure has important implications for the structural systematics. [S0031-9007(97)04474-8].

引用

页码：3668 / 3671

页数：4

共 28 条

[1]

[Anonymous], 1987, SOLID STATE COMMUN

[2] DIFFRACTION STUDIES OF THE HIGH-PRESSURE PHASES OF GAAS AND GAP [J].