Combined Effect of Rapid Thermal Annealing and Crystal Nature on the Gate Oxide Reliability of Czochralski Silicon

The effect of RTA treatment on the gate oxide reliability in the manner of as-grown and RTA-induced defect state was investigated. The RTA pre-treatment brings significant degradation of GOI yield, and the effect becomes severe as the v/G of a sample is increased. On the other hand, GOI yield was recovered when successive CMP processes was applied on the wafer after finishing the RTA process. In summary, void-rich layer with a thickness of few micrometers was formed in the wafer surface after the RTA treatment, and the density of void is clearly affected by the as-grown vacancy concentration.