A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

被引:3
作者
Alahmadi, Ahmed N. M. [1 ]
Karimov, Khasan S. [2 ]
机构
[1] Umm Al Qura Univ, Elect Engn Dept, Mecca 21955, Saudi Arabia
[2] Ghulam Ishaq Khan Inst Engn Sci & Technol, Topi 23640, Khyber Pakhtunk, Pakistan
关键词
memory device; organic semiconductors; poly-N-epoxy-propylcarbazole; tera-cyanoquino-dimethane; TRAPS;
D O I
10.3390/polym13101594
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. For the first time, this study reports that the novel conducting polymer Poly-N-Epoxy-Propyl Carbazole (PEPC) can offer effective memory storage behavior. In the current research, the electrical characterization of a single layer memory device (metal/polymer/metal) using PEPC, with or without doping of charge transfer complexes 7,7,8,8-tetra-cyanoquino-dimethane (TCNQ), was investigated. From the current-voltage characteristics, it was found that PEPC shows memory switching effects in both cases (with or without the TCNQ complex). However, in the presence of TCNQ, the PEPC performs faster memory switching at relatively lower voltage and, therefore, a higher ON and OFF ratio (I-ON/I-OFF similar to 100) was observed. The outcome of this study may help to further understand the memory switching effects of conducting polymer.
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页数:8
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