Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

被引：28

作者：

Cheng, Z. X. ^{[1
]}

Wang, X. L.

Dou, S. X.

Ozawa, K.

Kimura, H.

机构：

[1] Univ Wollongong, Inst Supercond & Elect Mat, Wollongong, NSW 2522, Australia

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2743910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi3.25Sm0.75V0.02T2.98O12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated temperature, and the coercive field decreased at the same time due to the strong domain depinning process at higher temperature. This film shows almost a polarization-fatigue-free character at room temperature, but the aggregation and diffusion of the thermally activated long-range oxygen vacancies caused strong domain pinning, and thus a poor fatigue resistance was observed at elevated temperature. (C) 2007 American Institute of Physics.

引用

页数：3

共 15 条

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