Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers

被引：20

作者：

Klenov, Dmitri O. ^{[1
]}

Zide, Joshua M. O. ^{[1
]}

LeBeau, James M. ^{[1
]}

Gossard, Arthur C. ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2715174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the microstructures of semimetallic ErAs nanoparticles embedded in epitaxial InGaAs layers by codeposition of Er. The size of the particles (1-3 nm) was approximately independent of the amount of deposited Er. At large ErAs concentrations (> 3 at. %), the particles showed a strong tendency to order on the {114} planes of the semiconductor matrix. The ordering was only observed along one of the < 110 > directions, likely reflecting the strong anisotropy in surface diffusion. (c) 2007 American Institute of Physics.

引用

页数：3

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