Enhanced multiferroic properties of relaxor bulk and thin film Na0.5Bi0.5TiO3 by ion doping: Theoretical study

被引：1

作者：

Apostolova, I. N. ^{[1
]}

Apostolov, A. T. ^{[2
]}

Wesselinowa, J. M. ^{[3
]}

机构：

[1] Univ Forestry, Sofia 1756, Bulgaria

[2] Univ Architecture, Civil Engn & Geodesy, Sofia 1046, Bulgaria

[3] Univ Sofia, Sofia 1164, Bulgaria

来源：

SOLID STATE COMMUNICATIONS | 2021年 / 334卷

关键词：

Na0.5Bi0.5TiO3; Ion doping; Polarization; Magnetization; Dielectric constant; Microscopic model; ROOM-TEMPERATURE FERROMAGNETISM; ANTIFERROELECTRIC PROPERTIES; CRITICAL-BEHAVIOR; BAND-GAP; TRANSITION; ORIGIN; PHASE;

D O I：

10.1016/j.ssc.2021.114393

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have calculated the spontaneous polarization P-s of ferroelectric Na0.5Bi0.5TiO3 (NBT) thin films. P-s increases with decreasing film thickness due to size and surface effects. It increases with increasing Dy and Nd ion doping and decreases by Er and Ho ion doping due to the different strain caused by the difference in the doping and host ion radii. Transition metal ion doping leads to appearance of ferromagnetism, i.e. of multiferroic properties at room temperature. The temperature dependence of the dielectric constant e' shows anomalies at both temperatures, T-d and T-m. e' decreases with increasing magnetic field. The critical exponents gamma, beta and delta are observed for bulk and thin film NBT. The value of gamma = 1.55 confirms the relaxor behavior of NBT.

引用

页数：5

共 54 条

[21] Structural evolution and electrical properties of Na0.5Bi0.5TiO3-CoFe2O4 ceramics with embedded structures [J].