Investigation of charge transport in organic single crystals using a "flip-crystal" field-effect technique

被引：0

作者：

Goldmann, C ^{[1
]}

Krellner, C ^{[1
]}

Pernstich, KP ^{[1
]}

Haas, S ^{[1
]}

Gundlach, DJ ^{[1
]}

Batlogg, B ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSDER.2004.1356576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on progress in organic single ctystal field-effect devices fabricated by a "flip-crystal" technique. High reproducibility of the device quality results from an improved chemical treatment process of the substrate. Hole mobilities of 10.7 cm(2)/Vs for rubrene, 1.3 cm(2)/Vs for tetracene and 1.4 cm(2)/Vs for pentacene single crystals have been measured even with limited purification of the starting materials. Four-terminal measurements facilitate the separation of intrinsic channel properties and contact effects.

引用

页码：409 / 412

页数：4

共 17 条

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