High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

被引：46
作者：
Navid, Reza [1 ]
Jungemann, Christoph
Lee, Thomas H.
Dutton, Robert W.
机构：
[1] Rambus Inc, Los Altos, CA 94022 USA
[2] Univ Armed Forces, Munich, Germany
[3] Stanford Univ, Moffett Field, CA 94035 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 12期
关键词：
D O I：
10.1063/1.2740345
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The noise characteristics of today's short-channel devices are shown to have a better resemblance to ballistic devices than to long-channel metal oxide semiconductor field effect transistors (MOSFETs). Therefore the noise characteristics of these devices are best modeled using a ballistic-MOSFET-based noise model. Extensive hydrodynamic device simulations are presented in support of this hypothesis and a simple compact model is introduced. This model is used for predicting the noise behavior of future nanoscale devices. Most of the findings of this work can also be applied to carbon nanotubes and nanowires because of their similarities to MOSFETs. (c) 2007 American Institute of Physics.
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页数：8
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