OPTIMIZATION OF ALN AND ALSCN FILM ICP ETCHING

被引：6
作者：
Luo, Zhifang [1 ,2 ,3 ]
Shao, Shuai [1 ,2 ,3 ]
Wu, Tao [1 ,2 ,3 ]
机构：
[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China
[3] Univ Chinese Acad Sci, Beijing, Peoples R China
来源：
2021 34TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2021) | 2021年
基金：
美国国家科学基金会; 上海市自然科学基金;
关键词：
HIGH-FREQUENCY; RESONATORS;
D O I：
10.1109/MEMS51782.2021.9375464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the inductively coupled plasma (ICP) etching characteristics of (0002) oriented Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al0.94Sc0.06N) piezoelectric thin films and implementation in AlN piezoelectric lamb wave resonators. A profile of 84 degrees with an etching rate of about 230nm/min using Cl-2/BCl3/N-2 mixed gas is achieved at AlN film, and a profile of 77 degrees using same mixed gas is obtained at Al0.94Sc0.06N film. Finally, we demonstrate the fabrication and characteristics of AlN contour mode resonators (CMRs), and report a CMR operating at approximately 400MHz with the quality factor exceeding 1600.
引用
收藏
页码：638 / 641
页数：4
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