Growth and optical properties of highly uniform and periodic InGaN nanostructures

被引：28

作者：

Chen, Peng ^{[1
]}

Chen, Ao ^{[1
]}

Chua, Soo Jin ^{[1
]}

Tan, Jen Ngee ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 13期

关键词：

D O I：

10.1002/adma.200602110

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InGaN nanodot arrays with improved optical properties, attributed to the strong localization of photogenerated carriers in the size-homogeneous nanodots, grown by nanoscale selective area epitaxy (NSAE) on electron-beam lithographically patterned templates are presented. The figure shows an array of 60 nm diameter cone-shaped InGaN nanodots with 200 nm spacing, and a single nanodot (inset).

引用

收藏

页码：1707 / +

页数：5

相关论文

共 34 条

[1] Recombination dynamics of localized excitons in InGaN quantum dots [J].

Bartel, T ;

Dworzak, M ;

Strassburg, M ;

Hoffmann, A ;

Strittmatter, A ;

Bimberg, D .

APPLIED PHYSICS LETTERS, 2004, 85 (11) :1946-1948

[2] Self-organized growth of nanostructure arrays on strain-relief patterns [J].

Brune, H ;

Giovannini, M ;

Bromann, K ;

Kern, K .

NATURE, 1998, 394 (6692) :451-453

[3] Fabrication of sub-100 nm patterns in SiO2 templates by electron-beam lithography for the growth of periodic III-V semiconductor nanostructures [J].

Chen, A. ;

Chua, S. J. ;

Chen, P. ;

Chen, X. Y. ;

Jian, L. K. .

NANOTECHNOLOGY, 2006, 17 (15) :3903-3908

[4] InGaN nanorings and nanodots by selective area epitaxy [J].

Chen, P ;

Chua, SJ ;

Wang, YD ;

Sander, MD ;

Fonstad, CG .

APPLIED PHYSICS LETTERS, 2005, 87 (14) :1-3

[5] High-density InGaN nanodots grown on pretreated GaN surfaces [J].

Chen, R. ;

Chua, S. J. ;

Tan, J. N. .

APPLIED PHYSICS LETTERS, 2006, 89 (02)

[6] Amplifying quantum signals with the single-electron transistor [J].

Devoret, MH ;

Schoelkopf, RJ .

NATURE, 2000, 406 (6799) :1039-1046

[7] Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures -: art. no. 102107 [J].

Dong, XY ;

Adelmann, C ;

Xie, JQ ;

Palmstrom, CJ ;

Lou, X ;

Strand, J ;

Crowell, PA ;

Barnes, JP ;

Petford-Long, AK .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3

[8] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[9] Room-temperature operation of patterned quantum-dot lasers fabricated by electron beam lithography and selective area metal-organic chemical vapor deposition [J].

Elarde, VC ;

Rangarajan, R ;

Borchardt, JJ ;

Coleman, JJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) :935-937

[10] Formation of ordered nanoscale semiconductor dots by ion sputtering [J].

Facsko, S ;

Dekorsy, T ;

Koerdt, C ;

Trappe, C ;

Kurz, H ;

Vogt, A ;

Hartnagel, HL .

SCIENCE, 1999, 285 (5433) :1551-1553

← 1 2 3 4 →