Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

被引:4
作者
Lee, Hyeongi [1 ]
Hwang, Youngwook [1 ]
Won, Taeyoung [1 ]
机构
[1] Inha Univ, Dept Elect Engn, Inchon 402751, South Korea
关键词
OLED; Simulation; CuPc; Hole injection layer;
D O I
10.3938/jkps.66.100
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq(3) (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.
引用
收藏
页码:100 / 103
页数:4
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