Special features of photoelectric properties of p-CdxHg1-xTe crystals at low temperatures:: The effects of the freezing-out of holes and elastic stress

The temperature and pressure dependences of photoconductivity, the photoelectromagnetic effect, dark electrical conductivity, and the Hall coefficient in p-CdxHg1-xTe samples with x approximate to 0.20-0.22 were measured at low temperatures. It is shown that recombination transitions in the temperature region of T < 30-40 K may be interpreted in the context of the two-level Shockley-Read model with allowance made for the freezing-out of majority charge carriers (holes). Furthermore, the second recombination center, which manifests itself only in the aforementioned temperature region, is an acceptor of a non-Coulomb type with an ionization energy of about 10-15 meV. (C) 2000 MAIK "Nauka/Interperiodica".