Modification of metal surfaces by microwave plasma at atmospheric pressure

被引：29
作者：
Shin, Dong H.
Bang, Chan U.
Kim, Jong H.
Han, Kim H.
Hong, Yong C.
Uhm, Han S.
Park, Dae K.
Kim, Ki H.
机构：
[1] Ajou Univ, Dept Mol Sci & Technol, Suwon 433749, South Korea
[2] Teus Co Ltd, Suwon 443812, South Korea
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 9-11期
关键词：
microwave plasma; surface treatment; contact angle; metal alloy;
D O I：
10.1016/j.surfcoat.2006.07.073
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Continuous wave (CW) microwave discharges operated at atmospheric pressure in argon gas were applied to surface modification of metal surfaces for improvement of adhesion with paint coating. The surface treatment was carried out by making use of the microwave discharges excited in a rectangular waveguide. The charged particles in the discharge plasma with high kinetic energy bombard the substrate, cleaning and etching its surface in rough morphology and polluted with organic compounds. The samples before and after plasma treatment were characterized by a scanning electron microscopy (SEM) and a contact angle analyzer. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4939 / 4942
页数：4
相关论文
共 22 条
  • [1] Borcia G, 2004, APPL SURF SCI, V221, P203, DOI 10.1016/S0169-4332(03)00879-1
  • [2] TREATMENT OF LOW-ENERGY SURFACES FOR ADHESIVE BONDING
    BREWIS, DM
    MATHIESON, I
    WOLFENSBERGER, M
    [J]. INTERNATIONAL JOURNAL OF ADHESION AND ADHESIVES, 1995, 15 (02) : 87 - 90
  • [3] Effects of the O2 concentration on the removal efficiency of volatile organic compounds with dielectric barrier discharges in Ar and N2
    Falkenstein, Z
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 525 - 529
  • [4] GOOSSENS O, 2001, SURF COAT TECH, V474, P142
  • [5] Abatement of CF4 by atmospheric-pressure microwave plasma torch
    Hong, YC
    Uhm, HS
    [J]. PHYSICS OF PLASMAS, 2003, 10 (08) : 3410 - 3414
  • [6] Band gap narrowing of TiO2 by nitrogen doping in atmospheric microwave plasma
    Hong, YC
    Bang, CU
    Shin, DH
    Uhm, HS
    [J]. CHEMICAL PHYSICS LETTERS, 2005, 413 (4-6) : 454 - 457
  • [7] Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet
    Jeong, JY
    Babayan, SE
    Schütze, A
    Tu, VJ
    Park, J
    Henins, I
    Selwyn, GS
    Hicks, RF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (05): : 2581 - 2585
  • [8] Use of high temperature pulsed plasma fluxes in modification of metal materials
    Kalin, BA
    Yakushin, VL
    Vasiliev, VI
    Tserevitinov, SS
    [J]. SURFACE & COATINGS TECHNOLOGY, 1997, 96 (01) : 110 - 116
  • [9] A study of GaN etch mechanisms using inductively coupled Cl2/Ar plasmas
    Kim, HS
    Yeom, GY
    Lee, JW
    Kim, TI
    [J]. THIN SOLID FILMS, 1999, 341 (1-2) : 180 - 183
  • [10] Surface cleaning by plasma-enhanced desorption of contaminants (PEDC)
    Krüger, P
    Knes, R
    Friedrich, J
    [J]. SURFACE & COATINGS TECHNOLOGY, 1999, 112 (1-3) : 240 - 244
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