MgxZn1-xO Films with a Low Residual Donor Concentration (<1015 cm-3) Grown by Molecular Beam Epitaxy

被引：21
作者：
Akasaka, Shunsuke [1 ]
Nakahara, Ken [1 ]
Tsukazaki, Atsushi [2 ]
Ohtomo, Akira [3 ]
Kawasaki, Masashi [2 ,4 ,5 ]
机构：
[1] ROHM Co Ltd, Interdisciplinary Devices R&D Ctr, Kyoto 6158585, Japan
[2] Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan
[3] Tokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, Japan
[4] Tohoku Univ, WPI Adv Inst Mat Res AIMR, Sendai, Miyagi 9808577, Japan
[5] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan
来源：
APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 07期
关键词：
THIN-FILMS; ZNO; HETEROSTRUCTURES; OXIDE; GAN;
D O I：
10.1143/APEX.3.071101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 10(14) cm(-3) for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These MgxZn1-xO films with low residual ND values would be suitable host materials for p-type doping. (C) 2010 The Japan Society of Applied Physics
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页数：3
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