Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers

被引：3

作者：

Chyi, JI

Wang, SK

Gau, JH

Shieh, JL

Pan, JW

机构：

[1] Department of Electrical Engineering, National Central University, Chung-Li

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 03期

关键词：

D O I：

10.1109/3.485395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using transfer matrix method. The validity and Feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiquantum barriers. Based on the simulated results, both 0.78 and 1.3 mu m graded-index separate confinement heterostructure (GRIN-SCH) lasers with predicted enhanced carrier and optical confinements using graded multistack multiquantum barriers are designed. Lower threshold current, higher modulation bandwidth as well as higher characteristic temperature are expected for these lasers.

引用

收藏

页码：442 / 447

页数：6

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