High power single and power-combined 100∼115 GHz Schottky balanced doublers

The research on high power 110 GHz single and power-combined frequency doublers based on discrete diodes is presented in this paper. The doubler with a single Schottky diode circuit has a measured peak efficiency of 33% and bandwidth over 13.6%. Meanwhile, two different architectures with two single devices adding inphase have been utilized to realize the power-combined doublers. The combined doubler features four discrete Schottky diodes with twelve junctions altogether soldered on two 127 mu m-thick ALN substrates. Both devices have demonstrated output powers more than 200 mW with a pumping power over 800 mW and are capable of pro. viding more power for higher driven power.