Quantum-well infrared photodetector structure synthesis: Methodology and experimental verification

被引:9
作者
Imam, N [1 ]
Glytsis, EN
Gaylord, TK
Choi, KK
Newman, PG
Detter-Hoskin, L
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
[3] USA, Res Lab, Adelphi, MD 20783 USA
[4] Georgia Tech Res Inst, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
intersubband; mid-infrared; optimization; photodetector; quantum heterostructure; quasibound states; simulated annealing;
D O I
10.1109/JQE.2002.808162
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A numerical method for global optimization of quantum-well infrared photodetector (QWIP) performance parameters is presented and experimentally verified. The single-band effective-mass Schroedinger equation is solved by employing the argument principle method (APM) to extract both the bound and quasibound eigen-energies of the quantum heterostructure. APM is combined with a simulated annealing algorithm to determine a set of device design parameters such as potential barrier height V-i, layer thickness d(i), number of material layers N, total device length, applied bias V-Bias etc., for which the QWIP performance is within a predetermined convergence criterion. The method presented incorporates. the effect of energy-dependent effective mass of electrons in nonparabolic conduction bands. The present model can handle many optimization parameters and can incorporate fabrication constraints to achieve physically realizable devices. In addition, the method is not limited to the optimization of absorption structures, and can be used for other instersubband devices such as electron-wave Fabry-Perot filters and quantum-cascade lasers. The strength and versatility of the present method are demonstrated by the design of a bicolor equal-absorption-peak QWIP structure, and experimental verification of the zero-bias absorption spectrum is presented.
引用
收藏
页码:468 / 477
页数:10
相关论文
共 36 条
  • [1] BOUND AND QUASI-BOUND STATE CALCULATIONS FOR BIASED/UNBIASED SEMICONDUCTOR QUANTUM HETEROSTRUCTURES
    ANEMOGIANNIS, E
    GLYTSIS, EN
    GAYLORD, TK
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (11) : 2731 - 2740
  • [2] [Anonymous], 1989, GENETIC ALGORITHM SE
  • [3] 10-16 μm broadband quantum well infrared photodetector
    Bandara, SV
    Gunapala, SD
    Liu, JK
    Luong, EM
    Mumolo, JM
    Hong, W
    Sengupta, DK
    McKelvey, MJ
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2427 - 2429
  • [4] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
    BASTARD, G
    [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
  • [5] Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)
  • [6] Two-stack indirect-barrier/triple-coupled quantum well infrared detector for mid-wavelength and long-wavelength infrared dual band detection
    Chiang, JC
    Li, SS
    Singh, A
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (24) : 3546 - 3548
  • [7] LOW DARK CURRENT INFRARED HOT-ELECTRON TRANSISTOR FOR 77-K OPERATION
    CHOI, KK
    TIDROW, MZ
    TAYSINGLARA, M
    CHANG, WH
    KUAN, CH
    FARLEY, CW
    CHANG, F
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 908 - 910
  • [8] CHOI KK, 1997, PHYSICS QUANTUM WELL
  • [9] CHUANG SL, 1995, PHYSICS OPTOELECTRON
  • [10] Collin R., 1991, FIELD THEORY GUIDED