Hot isostatic pressing of transparent AlON ceramics assisted by dissolution of gas inclusions

被引:32
|
作者
Li, Jianmin [1 ,2 ,3 ]
Zhang, Buhao [1 ,3 ]
Tian, Run [1 ,3 ]
Mao, Xiaojian [1 ,2 ,3 ]
Zhang, Jian [1 ,2 ,3 ]
Wang, Shiwei [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Key Lab Transparent & Optofunct Inorgan Mat, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金; 上海市自然科学基金; 国家重点研发计划;
关键词
Transparent ceramics; Sintering additive; Hot isostatic pressing; Annealing; AlON; OPTICAL-PROPERTIES; GAMMA-ALON; LIGHT-SCATTERING; RESIDUAL-STRESS; SILICON-NITRIDE; FABRICATION; MICROSTRUCTURE; TEMPERATURE; STATE; COMPOSITES;
D O I
10.1016/j.jeurceramsoc.2021.02.035
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, highly transparent AlON ceramics were fabricated using hot isostatic pressing (HIP) assisted by dissolution of gas inclusions. The influence of additive content, pre-sintering, HIPing and annealing parameters on the sintered AlON ceramics were investigated and optimized. The obtained transparent AlON ceramics kept high transmittance 85.8 % and low loss coefficient 0.005 cm-1 at 2000 nm after annealing. Compared with different sintering additives and pre-sintering atmospheres, densification mechanism of the present material is revealed that SiO was formed from SiO2 during pre-sintering under N2 atmosphere occupying micropores which was then solidified and dissolved into AlON matrix in HIPing processing. This transformation and dissolution of gas into AlON ceramics make it possible to anneal the HIPed ceramics without degradation of microstructure and transmittance.
引用
收藏
页码:4327 / 4336
页数:10
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