Throughput UHV/CVD SiGe and SiGe:C process for SiGe HBT and strained SiFET

被引：0
|
作者：
Chen, PS [1 ]
Tseng, YT [1 ]
Tsai, MJ [1 ]
Liu, CW [1 ]
机构：
[1] Ind Technol Res Inst, Elect Res & Serv Org, Chutung 310, Hisnchu, Taiwan
来源：
2002 SEMICONDUCTOR MANUFACTURING TECHNOLOGY WORKSHOP | 2002年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A high throughput SiGe UHV/CVD system is demonstrated. Due to the excellent uniformity of thickness and Ge concentration in within a wafer, wafer to wafer, and run-to-run, this system is suitable for manufacture with the throughput of 14 200-mm wafers per hour for the typical HBT structure. The UHV/CVD can fabricate low temperature Si, strained Si(1-x)Ge(x), strained Si(1-x)Ge(x):C, Si(1-y)C(y), and relaxed SiGe buffers. Various devices with good performance are fabricated by the UHV/CVD system, including HBTs, heterojuction phototransistor, strained Si MOSFET, photodetectors, quantum dot photodetectors with 6-9 mum responsivity, and strained SiGe MOSFET.
引用
收藏
页码：145 / 148
页数：4
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