Throughput UHV/CVD SiGe and SiGe:C process for SiGe HBT and strained SiFET

A high throughput SiGe UHV/CVD system is demonstrated. Due to the excellent uniformity of thickness and Ge concentration in within a wafer, wafer to wafer, and run-to-run, this system is suitable for manufacture with the throughput of 14 200-mm wafers per hour for the typical HBT structure. The UHV/CVD can fabricate low temperature Si, strained Si(1-x)Ge(x), strained Si(1-x)Ge(x):C, Si(1-y)C(y), and relaxed SiGe buffers. Various devices with good performance are fabricated by the UHV/CVD system, including HBTs, heterojuction phototransistor, strained Si MOSFET, photodetectors, quantum dot photodetectors with 6-9 mum responsivity, and strained SiGe MOSFET.