A Non-canonical Voltage-Sensing Mechanism Controls Gating in K2P K+ Channels

被引:151
|
作者
Schewe, Marcus [1 ]
Nematian-Ardestani, Ehsan [1 ]
Sun, Han [2 ,3 ]
Musinszki, Marianne [1 ]
Cordeiro, Soenke [1 ]
Bucci, Giovanna [4 ]
de Groot, Bert L. [2 ]
Tucker, Stephen J. [4 ,5 ]
Rapedius, Markus [1 ,6 ]
Baukrowitz, Thomas [1 ]
机构
[1] Univ Kiel, Inst Physiol, Olshaussenstr 40, D-24118 Kiel, Germany
[2] Max Planck Inst Biophys Chem, Computat Biomol Dynam Grp, D-37077 Gottingen, Germany
[3] Leibniz Inst Mol Pharmacol, D-13125 Berlin, Germany
[4] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[5] Univ Oxford, OXION Initiat, Oxford OX1 3PU, England
[6] Nan Technol GmbH, D-80636 Munich, Germany
基金
英国惠康基金; 英国生物技术与生命科学研究理事会;
关键词
DOMAIN POTASSIUM CHANNELS; CLC CHLORIDE CHANNELS; C-TYPE INACTIVATION; SELECTIVITY FILTER; CRYSTAL-STRUCTURE; MOLECULAR-BASIS; K-2P CHANNELS; ION-BINDING; PORE; OCCUPANCY;
D O I
10.1016/j.cell.2016.02.002
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
Two-pore domain (K2P) K+ channels are major regulators of excitability that endow cells with an outwardly rectifying background "leak" conductance. In some K2P channels, strong voltage-dependent activation has been observed, but the mechanism remains unresolved because they lack a canonical voltage-sensing domain. Here, we show voltage-dependent gating is common to most K2P channels and that this voltage sensitivity originates from the movement of three to four ions into the high electric field of an inactive selectivity filter. Overall, this ion-flux gating mechanism generates a oneway "check valve" within the filter because outward movement of K+ induces filter opening, whereas inward movement promotes inactivation. Furthermore, many physiological stimuli switch off this flux gating mode to convert K2P channels into a leak conductance. These findings provide insight into the functional plasticity of a K+-selective filter and also refine our understanding of K2P channels and the mechanisms by which ion channels can sense voltage.
引用
收藏
页码:937 / 949
页数:13
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