Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells

被引:32
|
作者
Goran, A. V. [1 ]
Bykov, A. A. [1 ]
Toropov, A. I. [1 ]
Vitkalov, S. A. [2 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
[2] CUNY City Coll, Dept Phys, New York, NY 10031 USA
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 19期
关键词
aluminium compounds; band structure; gallium arsenide; III-V semiconductors; semiconductor quantum wells; semiconductor superlattices; Shubnikov-de Haas effect; two-dimensional electron gas; HIGH FILLING FACTORS; INVERSION-LAYERS; SYSTEM; GAS; MAGNETORESISTANCE; MAGNETOTRANSPORT; RESONANCE;
D O I
10.1103/PhysRevB.80.193305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low-temperature (4.2 < T < 12.5 K) magnetotransport (B < 2 T) of two-dimensional electrons occupying two subbands (with energy E(1) and E(2)) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of Shubnikov-de Haas oscillations are found to be accompanied by magnetointersubband (MIS) oscillations, periodic in the inverse magnetic field. The period of the MIS oscillations obeys condition Delta(12)=(E(2)-E(1))=k center dot h omega(c), where Delta(12) is the subband energy separation, omega(c) is the cyclotron frequency, and k is the positive integer. At T=4.2 K the oscillations manifest themselves up to k=100. Strong temperature suppression of the magnetointersubband oscillations is observed. We show that the suppression is a result of electron-electron scattering. Our results are in good agreement with recent experiments, indicating that the sensitivity to electron-electron interaction is the fundamental property of magnetoresistance oscillations, originating from the second-order Dingle factor.
引用
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页数:4
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