Microstructures of high volume SiC reinforced tungsten composites produced by plasma spray

被引：20

作者：

Kang, HK ^{[1
]}

机构：

[1] Korea Inst Machinery & Mat, Chang Won 641010, South Korea

来源：

SCRIPTA MATERIALIA | 2004年 / 51卷 / 11期

关键词：

silicon carbide; plasma spray; decomposition;

D O I：

10.1016/j.scriptamat.2004.08.008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A high volume SiC reinforced tungsten composite produced by an atmospheric plasma spray was studied. Some SiC was simultaneously melted and decomposed into silicon and carbon, leaving pores in the SiG-rich regions. The amounts of decomposed silicon increased with increasing input power. Metal tungsten was partially oxidized to tungsten oxides resulting from spraying. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1051 / 1055

页数：5

共 9 条

[1] INTERFACIAL REACTIONS OF W THIN-FILM ON SINGLE-CRYSTAL (001)BETA-SIC
BAUD, L
JAUSSAUD, C
MADAR, R
BERNARD, C
CHEN, JS
NICOLET, MA
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 126 - 130
[2] Chaudry M. I., 1990, MATER RES SOC S P, V62, P507
[3] HEAT-TRANSFER AND FLUID-FLOW IN PLASMA SPRAYING
ELKADDAH, N
MCKELLIGET, J
SZEKELY, J
[J]. METALLURGICAL TRANSACTIONS B-PROCESS METALLURGY, 1984, 15 (01): : 59 - 70
[4] STABILITY OF W AS ELECTRICAL CONTACT ON 6H-SIC - PHASE-RELATIONS AND INTERFACE REACTIONS IN THE TERNARY-SYSTEM W-SI-C
GOESMANN, F
SCHMIDFETZER, R
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (2-3): : 224 - 231
[5] Effect of feedstock injection methods on oxidation behavior and microstructure of plasma sprayed W/Cu composites
Kang, HK
Kang, SB
[J]. SURFACE & COATINGS TECHNOLOGY, 2004, 182 (01) : 124 - 130
[6] NAARUSHIMA T, 1997, MAT T JIM, V38, P854
[7] MODELING OF A COUNTERFLOW PLASMA REACTOR
PAIK, SG
XI, C
KONG, P
PFENDER, E
[J]. PLASMA CHEMISTRY AND PLASMA PROCESSING, 1991, 11 (02) : 229 - 249
[8] Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy
Seng, WF
Barnes, PA
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 72 (01): : 13 - 18
[9] SMITH RW, 1995, JOM-J MIN MET MAT S, V47, P32

← 1 →