Initial stages of the development of semiconductor electronics in the Soviet union (60 years from the Invention of the Transistor)

被引：7

作者：

Stafeev, V. I. ^{[1
]}

机构：

[1] Orion State Sci Ctr, RD&P Ctr, Moscow 111123, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 05期

关键词：

Germanium; Point Contact; Lebedev Physical Institute; Cuprous Oxide; Ioffe Physicotechnical Institute;

D O I：

10.1134/S1063782610050015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The most important results of the early work of Soviet scientists in the research and development in the fields of semiconductors and semiconductor devices are reported, including results that are almost unknown now but played an important role in the development of semiconductor electronics in the Soviet Union.

引用

页码：551 / 557

页数：7